2SB1603 查看數據表（PDF） - Panasonic Corporation

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2SB1603

Silicon PNP epitaxial planar type

Panasonic Corporation 

Power Transistors

2SB1603, 2SB1603A

Silicon PNP epitaxial planar type

For low-voltage switching

s Features

q Low collector to emitter saturation voltage VCE(sat)

q High-speed switching

q Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

s Absolute Maximum Ratings (TC=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to 2SB1603

–40

base voltage 2SB1603A

VCBO

–50

V

Collector to 2SB1603

–20

emitter voltage 2SB1603A

VCEO

–40

V

Emitter to base voltage

VEBO

–5

V

Peak collector current

ICP

–8

A

Collector current

IC

–4

A

Collector power TC=25°C

dissipation

Ta=25°C

PC

25

W

2

Junction temperature

Storage temperature

Tj

150

˚C

Tstg

–55 to +150

˚C

9.9±0.3

φ3.2±0.1

Unit: mm

4.6±0.2

2.9±0.2

1.2±0.15

1.45±0.15

2.6±0.1

0.7±0.1

0.75±0.1

2.54±0.2

5.08±0.4

7° 1 2 3

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

s Electrical Characteristics (TC=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter 2SB1603

voltage

2SB1603A

Symbol

ICBO

IEBO

VCEO

Conditions

VCB = –40V, IE = 0

VEB = –5V, IC = 0

IC = –10mA, IB = 0

min

typ

max Unit

–50

µA

–50

µA

–20

V

–40

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

hFE1

hFE2*

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

VCE = –2V, IC = – 0.1A

45

VCE = –2V, IC = –1A

90

260

IC = –2A, IB = – 0.1A

– 0.5

V

IC = –2A, IB = – 0.1A

–1.5

V

VCE = –5V, IC = – 0.5A, f = 10MHz

150

MHz

0.3

µs

IC = –2A, IB1 = – 0.2A, IB2 = 0.2A

0.4

µs

0.1

µs

*hFE2 Rank classification

Rank

Q

P

hFE2

90 to 180 130 to 260

1

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