2SB1672 查看數據表（PDF） - ROHM Semiconductor
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2SB1672 Datasheet PDF : 1 Pages
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Transistors
Power Transistor (−80V, −7A)
2SB1672
2SB1672
!Features
1) Low saturation voltage.
(Typ. VCE(sat) = −0.3V at IC / IB =−4A / −0.4A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C).
4) Wide SOA (safe operating area).
5) Complements the 2SD2611.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−80
−80
−5
−7
−10
2
30
150
−55 ∼ +150
Unit
V
V
V
A(DC)
A(Pulse) *
W
W(Tc=25°C)
°C
°C
!External dimensions (Units : mm)
10.0
φ 3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1672
TO-220FN
EF
−
500
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
−80
−
−
V
IC = −50µA
Collector-emitter breakdown voltage BVCEO
−80
−
−
V
IC = −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE = −50µA
Collector cutoff current
ICBO
−
−
−10
µA VCB = −80V
Emitter cutoff current
IEBO
−
−
−10
µA VEB = −4V
Collector-emitter saturation voltage
VCE(sat)
−
−
−1
V
IC/IB = −4A/−0.4A
∗
Base-emitter saturation voltage
VBE(sat)
−
−
−1.5
V
IC/IB = −4A/−0.4A
∗
DC current transfer ratio
hFE
100
−
320
−
VCE/IC = −5V/−1A
Transition frequency
fT
−
12
−
MHz VCE = −5V , IE = 0.5A , f = 5MHz
Output capacitance
Cob
−
200
−
pF VCB = −10V , IE = 0A , f = 1MHz
∗ Measured using pulse current
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