2SB1698T100 查看數據表（PDF） - ROHM Semiconductor

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2SB1698T100

Low frequency amplifier

ROHM Semiconductor 

Transistors

Low frequency amplifier

2SB1698

2SB1698

zApplication

Low frequency amplifier

Driver

zFeatures

1) A collector current is large.

2) VCE(sat) ≤ −370mV

at IC =−1A / IB =−50mA

zDimensions (Unit : mm)

Each lead has same dimensions

ROHM : MPT3

JEITA : SC-62

JEDEC: SOT-89

Abbreviated symbol: FL

(1)Base

(2)Collector

(3)Emitter

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol Limits

Collector-base voltage

VCBO

−30

Collector-emitter voltage

VCEO

−30

Emitter-base voltage

VEBO

−6

Collector current

IC

−1.5

ICP

−3

Power dissipation

500

PC

2

Junction temperature

tj

150

Range of storage temperature tstg −55 to +150

∗1 Single pulse, PW=1ms

∗2 Mounted on a 40+ 40+ 0.7(mm)CERAMIC SUBSTRATE

Unit

V

V

V

A

A ∗1

mW

W ∗2

°C

°C

zPackaging specifications

Package

Type

Code

Basic ordering unit (pieces)

2SB1698

Taping

T100

1000

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Collector output capacitance

∗ Pulsed

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

Cob

Min. Typ. Max. Unit

Conditions

−30

−

−

V IC=−10µA

−30

−

−

V IC=−1mA

−6

−

−

V IE=−10µA

−

−

−100 nA VCB=−30V

−

−

−100 nA VEB=−6V

−

−200 −370 mV IC=−1A, IB=−50mA

270

−

680

− VCE=−2V, IC=−100mA ∗

−

280

−

MHz VCE=−2V, IE=100mA, f=100MHz ∗

−

13

−

pF VCB=−10V, IE=0A, f=1MHz

Rev.A

1/2

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