2SB1588 查看數據表（PDF） - Sanken Electric co.,ltd.

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产品描述 (功能)

生产厂家

2SB1588

Silicon PNP Epitaxial Planar Transistor

Sanken Electric co.,ltd. 

Darlington

2SB1588

(70Ω) E

B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Application : Audio, Series Regulator and General Purpose

sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics

(Ta=25°C) External Dimensions FM100(TO3PF)

Symbol

Ratings

Unit

Symbol

Conditions

Ratings

Unit

VCBO

VCEO

VEBO

IC

–160

–150

–5

–10

V

ICBO

VCB=–160V

–100max µA

V

IEBO

VEB=–5V

–100max µA

V

V(BR)CEO

IC=–30mA

–150min

V

A

hFE

VCE=–4V, IC=–7A

5000min∗

IB

–1

A

VCE(sat)

IC=–7A, IB=–7mA

–2.5max

V

PC

80(Tc=25°C)

W

VBE(sat)

IC=–7A, IB=–7mA

–3.0max

V

Tj

150

°C

fT

Tstg

–55 to +150

°C

COB

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

50typ

230typ

MHz

pF

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

sTypical Switching Characteristics (Common Emitter)

VCC

RL

IC

VBB1

VBB2

IB1

IB2

ton

tstg

tf

(V)

(Ω)

(A)

(V)

(V)

(mA)

(mA)

(µs)

(µs)

(µs)

–70

10

–7

–10

5

–7

7

0.8typ 3.0typ 1.2typ

15.6±0.2

5.5±0.2

3.45 ±0.2

ø3.3±0.2

a

b

5.45±0.1

1.75

2.15

1.05

+0.2

-0.1

5.45±0.1

0.65

+0.2

-0.1

0.8

3.35

1.5 4.4 1.5

Weight : Approx 6.5g

a. Part No.

B C E b. Lot No.

I C– V CE Characteristics (Typical)

–10

–

2.

5mA

–2.

0

m

A

–1.5mA

–8

–1.2mA

–1.0mA

–6

–0.8mA

–0.6mA

–4

IB=–0.4mA

–2

0

0

–2

–4

–6

Collector-Emitter Voltage VCE(V)

V CE( s a t ) – I B Characteristics (Typical)

–3

I C– V BE Temperature Characteristics (Typical)

(VCE=–4V)

–10

–8

–2

–6

–10A

–7A

–4

IC=–5A

–1

–2

0

–0.2 –0.5 –1

–5 –10

Base Current IB(mA)

–50 –100 –200

0

0

–1

–2

–2.5

Base-Emittor Voltage VBE(V)

h FE– I C Characteristics (Typical)

40,000

(VCE=–4V)

Typ

10,000

5,000

h FE– I C Temperature Characteristics (Typical)

50,000

(VCE=–4V)

125˚C

10,000

5,000

25˚C

–30˚C

θ j-a– t Characteristics

3

1

0.5

1,000

–0.2

–0.5

–1

–5

Collector Current IC(A)

1,000

500

–10

–0.2

–0.5 –1

–5

Collector Current IC(A)

0.1

–10

1

5 10

50 100

Time t(ms)

500 1000 2000

f T– I E Characteristics (Typical)

(VCE=–12V)

100

80

60

Typ

40

20

0

0.02

0.05 0.1

0.5 1

Emitter Current IE(A)

5 10

Safe Operating Area (Single Pulse)

–30

–10

1

0

10

0ms

m

s

–5

DC

–1

–0.5

–0.1

Without Heatsink

Natural Cooling

–0.05

–3

–5

–10

–50 –100 –200

Collector-Emitter Voltage VCE(V)

Pc–Ta Derating

80

60

40

20

Without Heatsink

3.5

0

0

25

50

75

100 125 150

Ambient Temperature Ta(˚C)

51

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