2SB1530 查看數據表（PDF） - Inchange Semiconductor

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2SB1530

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1530

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB=B -50mA

VBE(on) Base-Emitter On Voltage

IC= -50mA; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

hFE-1

DC Current Gain

IC= -50mA; VCE= -4V

hFE-2

DC Current Gain

IC= -0.5A; VCE= -10V

MIN TYP. MAX UNIT

-150

V

-6

V

-3.0 V

-1.0 V

-1 μA

60

200

60

‹ hFE-1 Classifications

B

C

60-120 100-200

isc Website：www.iscsemi.cn

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