2SB1588 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
2SB1588 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1588
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
-150
V
VCEsat Collector-emitter saturation voltage IC=-7 A;IB=-7m A
-2.5
V
VBEsat Base-emitter saturation voltage
IC=-7 A;IB=-7m A
-3.0
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-100 μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100 μA
hFE
DC current gain
IC=-7A ; VCE=-4V
5000
fT
Transition frequency
IC=-2A ; VCE=-12V
50
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
230
pF
体 Switching times
固I电NC半H导ANGE SEMICONDUCTOR ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-7A;RL=10Ω
IB1=-IB2=-7mA
VCC=-70V
0.8
μs
3.0
μs
1.2
μs
hFE classifications
O
P
Y
5000-12000 6500-20000 15000-30000
2
Share Link: 