SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB553
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-0.4A
ICBO
Collector cut-off current
VCB=-70V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-1V
hFE-2
DC current gain
IC=-4A ; VCE=-1V
COB
Collector output capacitance
IE=0 ; VCB=-10V; f=1MHz
fT
Transition frequency
IC=-1A ; VCE=-4V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=-0.3A; VCC?-30V
RL=10@
MIN TYP. MAX UNIT
-50
V
-0.2 -0.4
V
-0.9 -1.2
V
-30
µA
-50
µA
70
240
30
250
pF
10
MHz
0.2
µs
2.5
µs
0.5
µs
hFE-1Classifications
O
Y
70-140
120-240
2