2SB1588 查看數據表（PDF） - New Jersey Semiconductor
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2SB1588 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
2SB1588
ELECTRICAL CHARACTERISTICS
fc=2B'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage |c= -7A; IB= -7mA
VBE(sat) Base-Emitter Saturation Voltage
lc= -7A; IB= -7mA
ICBO
Collector Cutoff Current
VCB=-160V;IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hFE
DC Current Gain
lc= -7A;VCE= -4V
COB
Collector Output Capacitance
lE=0;VCB=-10V;f=1MHz
fr
Current-Gain—Bandwidth Product IE=2A;VCE=-12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=-7A; lBi=-lB2=-7mA,
Vcc= -70V,RL= 1 0 a
MIN TYP. MAX UNIT
-150
V
-2.5
V
-3.0
V
-100 uA
-100
uA
5000
30000
230
PF
50
MHz
0.8
11 S
3.0
us
1.2
11 S
Classifications
o
P
Y
5000-12000 6500-20000 15000-30000
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