DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

V826532K04SXTG-B1 查看數據表(PDF) - Mosel Vitelic Corporation

零件编号
产品描述 (功能)
生产厂家
V826532K04SXTG-B1
Mosel-Vitelic
Mosel Vitelic Corporation  Mosel-Vitelic
V826532K04SXTG-B1 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MOSEL VITELIC
Serial Presence Detect Information
Bin Sort:
B1 (PC266A @ CL = 2)
B0 (PC266B @ CL = 2.5)
A1 (PC200 @ CL = 2)
V826532K04S
Function Supported
Hex value
Byte #
Function described
A1 B0 B1 A1 B0 B1
0 Defines # of Bytes written into serial memory at module manufacturer
128bytes
80h
1 Total # of Bytes of SPD memory device
256bytes
08h
2 Fundamental memory type
SDRAM DDR
07h
3 # of row address on this assembly
12
0Ch
4 # of column address on this assembly
10
0Ah
5 # of module Rows on this assembly
2 Bank
02h
6 Data width of this assembly
64 bits
40h
7 .........Data width of this assembly
-
00h
8 VDDQ and interface standard of this assembly
SSTL 2.5V
04h
9 DDR SDRAM cycle time at CAS Latency =2.5
8ns 7.5ns 7ns 80h 75h 70h
10 DDR SDRAM Access time from clock at CL=2.5
±0.8ns ±0.75n ±0.70n 80h 75h 70h
11 DIMM configuration type(Non-parity, Parity, ECC)
Non-parity, ECC
00h
12 Refresh rate & type
15.6us & Self refresh
80h
13 Primary DDR SDRAM width
x8
08h
14 Error checking DDR SDRAM data width
N/A
00h
15 Minimum clock delay for back-to-back random column
address
tCCD=1CLK
01h
16 DDR SDRAM device attributes : Burst lengths supported
2,4,8
0Eh
17 DDR SDRAM device attributes : # of banks on each DDR SDRAM
4 banks
04h
18 DDR SDRAM device attributes : CAS Latency supported
2,2.5
0Ch
19 DDR SDRAM device attributes : CS Latency
0CLK
01h
20 DDR SDRAM device attributes : WE Latency
1CLK
02h
21 DDR SDRAM module attributes
Differential clock /
20h
non Registered
22 DDR SDRAM device attributes : General
+/-0.2V voltage tolerance
00h
23 DDR SDRAM cycle time at CL =2
10ns 10ns 7.5ns A0h A0h 75h
24 DDR SDRAM Access time from clock at CL =2
±0.8ns ±0.8n ±0.75 80h 80h 75h
25 DDR SDRAM cycle time at CL =1.5
-
-
-
00h
26 DDR SDRAM Access time from clock at CL =1.5
-
-
-
00h
27 Minimum row precharge time (=tRP)
28 Minimum row activate to row active delay(=tRRD)
20ns 20ns 18ns 50h 50h 48h
15ns 15ns 14ns 3Ch 3Ch 38h
V826532K04S Rev. 1.2 March 2002
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]