2SB676 查看數據表（PDF） - SavantIC Semiconductor
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2SB676 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB676
DESCRIPTION
·With TO-220C package
·High DC Current Gain
: hFE=2000 @VCE=-2V, IC=-1A (Min.)
·DARLINGTON
APPLICATIONS
·For switching applications
·Hammer drive, pulse motor drive applications
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector; connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC
Collector current-DC
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-80
-5
-4
30
150
-55~150
UNIT
V
V
V
A
W
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