2SB676 查看數據表（PDF） - SavantIC Semiconductor
零件编号
产品描述 (功能)
生产厂家
2SB676 Datasheet PDF : 3 Pages
| |||
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB676
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0
VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-6mA
VBEsat
Base-emitter saturation voltage
IC=-3A ,IB=-6mA
ICBO
Collector cut-off current
VCB=-100V, IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
VCE=-30V, IB1=-IB2=-6mA
RL=10@
MIN TYP. MAX UNIT
-80
V
-1.5
V
-2.0
V
-20 µA
-2.5 mA
2000
1000
0.15
µs
0.80
µs
0.40
µs
2
Share Link: 