2SB788(2003) 查看數據表（PDF） - Panasonic Corporation
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2SB788 Datasheet PDF : 3 Pages
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Transistors
2SB0788 (2SB788)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD0958 (2SD958)
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−120
V
Collector-emitter voltage (Base open) VCEO
−120
V
Emitter-base voltage (Collector open) VEBO
−7
V
Collector current
IC
−20
mA
Peak collector current
ICP
−50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Noise voltage
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
NV
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VCE = −2 V, IC = −2 A
IC = −20 mA, IB = −2 mA
VCE = −40 V, IC = −1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
−120
−120
−7
180
V
V
V
−100 nA
−1
µA
520
− 0.6 V
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
180 to 360 260 to 520
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00055BED
1
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