2SB817E 查看數據表（PDF） - TAITRON Components Incorporated
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2SB817E Datasheet PDF : 3 Pages
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Power Transistor (PNP)
2SB817E
Power Transistor (PNP)
Features
• 2SB817E transistor is designed for use in general purpose
power amplifier, application
Mechanical Data
Case:
Terminals:
Weight:
TO-3P, Plastic Package
Plated leads solderable per MIL-STD-750, Method 2026
0.22 ounce, 6.2 gram
TO-3P
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2SB817E
VCBO
Collector-Base Voltage
160
VCEO
Collector-Emitter Voltage
140
VEBO
Emitter-Base Voltage
6.0
IC
Collector Current-Continuous
12
ICM
Collector Current-Peak
15
Power Dissipation at TC=25°C
100
Ptot
Power Dissipation Derate above 25°C
0.8
RθJC
TJ,
TSTG
Thermal Resistance from Junction to Case
Operating and Storage Junction Temperature
Range
1.25
-55 to +150
Unit
V
V
V
A
A
W
W/° C
° C /W
°C
Conditions
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
Rev. A/AH 2008-04-16
Page 1 of 3
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