2SB817E 查看數據表（PDF） - TAITRON Components Incorporated

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2SB817E

Power Transistor (PNP)

TAITRON Components Incorporated 

Power Transistor (PNP)

Electrical Characteristics (T Ambient=25ºC unless noted otherwise)

Symbol

Description

*hFE

D.C. Current Gain

V(BR)CBO Collector-Base Breakdown Voltage

V(BR)CEO Collector-Emitter Breakdown Voltage

V(BR)EBO Emitter-Base Breakdown Voltage

*VCE(sat) Collector-Emitter Saturation Voltage

*VBE(on) Base-Emitter On Voltage

ICBO

Collector-Base Cut-off Current

IEBO

Emitter-Base Cut-off Current

ton

Turn-on Time

ts

Storage Time

tf

Fall Time

2SB817E

Unit

Min.

Max.

100

200

20

-

160

-

V

140

-

V

6.0

-

V

-

2.5

V

-

1.5

V

-

100

μA

-

100

μA

-

0.3

μS

-

7.0

μS

0.7

μS

*Pulse Test: Pulse Width= 300µs, Duty Cycle ≤2.0%

2SB817E

Conditions

VCE=5.0V, IC=1.0A

VCE=5.0V, IC=6.0A

IC=5.0mA, IE=0

IC=5.0mA, IB=0

IB=5.0mA, IC=0

IC=5.0A, IB=0.5A

IC=1.0A, VCE=5.0V

VCB=80V, IE=0

VEB=4.0V, IC=0

VCC=20V, IC=1.0A

IB1=-IB2=100mA

PW=20μS

www.taitroncomponents.com

Rev. A/AH 2008-04-16

Page 2 of 3

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