2SB757 查看數據表（PDF） - SavantIC Semiconductor
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2SB757 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB757
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-0.1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-0.1mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBE(sat) Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
VCB=-40V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-2V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-15A;IB1=-IB2=-1.5A
RL=2@;PW=20µs,DutyB2%
MIN TYP. MAX UNIT
-40
V
-40
V
-5
V
-0.8 V
-1.8 V
-10 µA
-100 µA
40
240
1.0 µs
2.0 µs
1.0 µs
2
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