2SB966 查看數據表（PDF） - Inchange Semiconductor
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2SB966 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB966
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
-120
V
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
-1.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-5A ;IB=-0.5A
VCB=-120V; IE=0
VEB=-5V; IC=0
-2.0
V
-50
μA
-50
μA
hFE -1
DC current gain
IC=-1A ; VCE=-5V
60
320
hFE -2
DC current gain
导体 COB
Output capacitance
固I电NC半HANGE SEMICONDUCTOR fT
Transition frequency
IC=-5A ; VCE=-5V
IE=0 ; VCB=-10V;f=1MHz
IC=-1A ; VCE=-5V
20
200
65
pF
MHz
2
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