2SC1115 查看數據表（PDF） - Inchange Semiconductor

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2SC1115

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

VBEsat Base-emitter saturation voltage

IC=5A; IB=0.5A

ICBO

Collector cut-off current

VCB=140V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=3A ; VCE=4V

fT

Transition frequency

IC=1A ; VCE=12V

Product Specification

2SC1115

MIN TYP. MAX UNIT

80

V

5

V

1.5 V

2.0 V

0.1 mA

0.1 mA

30

150

10

MHz

2

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