Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA
VBE sat Base-emitter saturation voltage
IC=500mA; IB=50mA
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=200mA ; VCE=5V
fT
Transition frequency
IC=200mA ; VCE=10V
Product Specification
2SC1161
MIN TYP. MAX UNIT
120
V
6
V
1.5
V
2.0
V
1.0 μA
1.0 μA
30
200
5
MHz
2