2SB966 查看數據表（PDF） - Quanzhou Jinmei Electronic

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产品描述 (功能)

生产厂家

2SB966

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A ;IB=-0.5A

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE -1

DC current gain

IC=-1A ; VCE=-5V

hFE -2

DC current gain

IC=-5A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-1A ; VCE=-5V

Product Specification

2SB966

MIN TYP. MAX UNIT

-120

V

-1.5

V

-2.0

V

-50

μA

-50

μA

60

320

20

200

pF

65

MHz

2

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