2SC1051 查看數據表（PDF） - Quanzhou Jinmei Electronic

零件编号

产品描述 (功能)

生产厂家

2SC1051

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

VBE

Base-emitter on voltage

IC=1A ; VCE=5V

ICBO

Collector cut-off current

VCB=150V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=5V

‹ hFE Classifications

C

D

E

F

40-80 60-120 100-200 160-320

www.jmnic.com

2SC1051

MIN TYP. MAX UNIT

100

V

150

V

5

V

2.0

V

1.5

V

0.1 mA

0.1 mA

40

320

8

MHz

2

Share Link: