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2SC1096 查看數據表(PDF) - SavantIC Semiconductor

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2SC1096 Datasheet PDF : 3 Pages
1 2 3
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1096
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
VBEsat Base-emitter saturation voltage
IC=3A ;IB=0.3A
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
ICBO
Collector cut-off current
VCB=30V;IE=0
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
COB
Output capacitance
fT
Transition frequency
VEB=3V; IC=0
IC=20mA ; VCE=5V
IC=1.0A ; VCE=5V
IE=0; VCB=10V;f=1.0MHz
IC=0.1A ; VCE=5V
MIN TYP. MAX UNIT
2.0
V
2.0
V
30
V
1.0
µA
1.0
µA
20
40
250
55
pF
65
MHz
u hFE-1 classifications
N
M
L
K
40-60 50-100 80-160 120-250
2

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