C1567 查看數據表（PDF） - Inchange Semiconductor
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C1567 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1567 2SC1567A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SC1567
100
V(BR)CEO
Collector-emitter
breakdown voltage
IC=0.1mA ;IB=0
V
2SC1567A
120
V(BR)EBO Emitter-base breakdown voltage
IE=1μA ;IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50m A
VBEsat Base-emitter saturation voltage
IC=0.5A ;IB=50m A
hFE-1
DC current gain
IC=150mA ; VCE=10V
0.2
0.4
V
0.85 1.2
V
65
330
hFE-2
DC current gain
IC=0.5A ; VCE=5V
50
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
11
pF
fT
Transition frequency
IC=50mA ; VCE=10V,f=200MHz
120
MHz
hFE-1 Classifications
R
S
130-220
185-330
2
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