2SC1922 查看數據表（PDF） - Inchange Semiconductor
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2SC1922 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1922
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High speed switching
APPLICATIONS
·For TV horizontal output applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
1500
800
6
2.5
50
150
-65~150
UNIT
V
V
V
A
W
℃
℃
VALUE
2.5
UNIT
℃/W
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