2SC2304 查看數據表（PDF） - Inchange Semiconductor
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2SC2304 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A
VBEsat Base-emitter saturation voltage
IC=8A; IB=1.6A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE -2
DC current gain
IC=10A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=10V
Product Specification
2SC2304
MIN TYP. MAX UNIT
400
V
500
V
7
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
50
10
35
MHz
2
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