2SC2258A 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SC2258A

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

ICER

Collector cutoff current

VCE=250V;RBE=100kΩ

V(BR)EBO Emitter-base breakdown voltage

IE=0.1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5m A

VBE

Base-emitter voltage

IC=40mA ; VCE=20V

hFE-1

DC current gain

IC=40mA ; VCE=20V

hFE-2

DC current gain

IC=5mA ; VCE=50V

COB

Output capacitance

IE=0; VCB=50V;f=1MHz

fT

Transition frequency

IE=-10mA ; VCE=10V

Product Specification

2SC2258A

MIN TYP. MAX UNIT

100 μA

7

V

1.2

V

1.2

V

40

30

3

4.5 pF

100

MHz

2

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