2SC2480 查看數據表（PDF） - Panasonic Corporation
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2SC2480 Datasheet PDF : 4 Pages
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Transistors
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
■ Features
0.40+–00..0150
3
0.16+–00..0160
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1
2
(0.95) (0.95)
1.9±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
50
mA
lifecy , dis Collector power dissipation
PC
150
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
Marking Symbol: R
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Mini3-G1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
inc typ Collector-base voltage (Emitter open)
c tinued ance Emitter-base voltage (Collector open)
M is con inten Base-emitter voltage
/Dis ma Forward current transfer ratio
D ance type, Transition frequency *
ten ce Reverse transfer capacitance
ain nan (Common base)
VCBO
VEBO
VBE
hFE
fT
Crb
IC = 100 µA, IE = 0
30
IE = 10 µA, IC = 0
3
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −2 mA
25
VCB = 10 V, IE = −15 mA, f = 200 MHz 800
VCE = 6 V, IC = 0, f = 1 MHz
720
1 300
0.8
250
1 600
V
V
mV
MHz
pF
M inte Reverse transfer capacitance
ma (Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.0 1.5
pF
ned Power gain
GP VCB = 10 V, IE = −1 mA, f = 200 MHz
20
dB
(pla Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
T
S
No-rank
fT
800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
Publication date: June 2006
SJC00116CED
1
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