2SC2488 查看數據表（PDF） - Inchange Semiconductor
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2SC2488 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2488
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0
150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 0.8A
2.0
V
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 5V
2.5
V
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
hFE-2
fT
www.iscsemi.cn DC Current Gain
IC= 1A; VCE= 5V
DC Current Gain
IC= 8A; VCE= 5V
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
40
20
50
hFE-2 Classifications
R
Q
P
O
2
mA
280
MHz
40-80 60-120 90-180 140-280
isc Website：www.iscsemi.cn
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