2SC2489 查看數據表（PDF） - Inchange Semiconductor
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2SC2489 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2489
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 0.8A
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 5V
hFE-2
DC Current Gain
IC= 10A ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V
MIN TYP. MAX UNIT
150
V
2.0
V
2.5
V
1
mA
2
mA
40
280
30
50
MHz
hFE-1 Classifications
R
Q
P
O
40-80 60-120 90-180 140-280
isc Website：www.iscsemi.cn
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