2SC2613 查看數據表（PDF） - Inchange Semiconductor
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2SC2613 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE=∞,L=100mH
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.5A
ICBO
Collector cut-off current
ICEO
Collector cut-off current
VCB=400V; IE=0
VCE=350V; RBE=∞
hFE-1
DC current gain
IC=2.5A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=5.0A IB1=- IB2=1A
VCC≈150V
Product Specification
2SC2613
MIN TYP. MAX UNIT
400
V
7
V
1.0
V
1.5
V
100 μA
100 μA
15
7
1.0
μs
1.2
2.5
μs
1.0
μs
2
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