2SC2624 查看數據表（PDF） - Inchange Semiconductor
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2SC2624 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
400
V
VCEO(SUS) Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
5
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
80
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.17 ℃/W
isc Product Specification
2SC2624
isc Website：www.iscsemi.cn
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