2SC2624 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
2SC2624 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2624
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.4A
ICBO
Collector Cutoff Current
VCB= 450V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE
DC Current Gain
IC= 5A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A , IB1= -IB2= 0.8A
RL= 20Ω;PW=20μs
Duty Cycle≤2%
MIN TYP. MAX UNIT
400
V
400
V
450
V
7
V
1.2
V
1.5
V
1.0 mA
0.1 mA
10
1.0 μs
2.0 μs
1.0 μs
isc Website：www.iscsemi.cn
2
Share Link: 