C2517 查看數據表（PDF） - SavantIC Semiconductor
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C2517 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2517
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A ; IB1=0.3A;L=1mH
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=100V ;IE=0
VCE=100V; VBE=-1.5V
Ta=125
VEB=10V ;IC=0
hFE-1
DC current gain
IC=0.2 A ; VCE=5V
hFE-2
DC current gain
IC=2 A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; IB1=-IB2=0.3A
RL=17@; VCC=50V
MIN TYP. MAX UNIT
100
V
0.6
V
1.5
V
10
µA
10
µA
1
mA
10
µA
40
40
200
0.5
µs
2.5
µs
0.5
µs
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
2
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