2SC2881 查看數據表（PDF） - Toshiba
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2SC2881 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications
Power Amplifier Applications
2SC2881
Unit: mm
• High voltage: VCEO = 120 V
• High transition frequency: fT = 120 MHz (typ.)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on ceramic substrate)
• Complementary to 2SA1201
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
120
V
VCEO
120
V
VEBO
5
V
IC
800
mA
IB
160
mA
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
−55 to 150
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21
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