2SC2881 查看數據表（PDF） - Toshiba
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2SC2881 Datasheet PDF : 4 Pages
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800
20
50
600
IC – VCE
Common emitter
10
Ta = 25°C
5
400
3
2
200
IB = 1 mA
0
0
0
4
8
12
16
Collector-emitter voltage VCE (V)
2SC2881
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 5 V
Ta = 100°C
25
−25
10
3
10
30
100
300
1000
Collector current IC (mA)
VCE (sat) – IC
1
Common emitter
IC/IB = 10
0.5
0.3
0.1
0.05
0.03
3
Ta = 100°C
25
−25
10
30
100
300
Collector current IC (mA)
Safe Operating Area
3000
IC max (pulse)*
1000 IC max (continuous)
500
100 ms*
300
10 ms*
1 ms*
1000
100
DC operation Ta = 25°C
50
30
10
*: Single nonrepetitive pulse
5 Ta = 25°C
Curves must be derated
3
linearly with increase in
temperature.
Tested without a substrate.
1
0.3
1
3
10
VCEO max
30
100
300
Collector-emitter voltage VCE (V)
IC – VBE
1.0
Common emitter
VCE = 5 V
0.8
0.6
0.4
Ta = 100°C 25 −25
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
2009-12-21
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