2SC2831 查看數據表（PDF） - Inchange Semiconductor
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2SC2831 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2831 2SC2831A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=25mH
VCE(sat) Collector-emitter saturation voltage IC=1A; IB=0.2A
VBE(sat) Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO
Collector
cut-off current
2SC2831 VCB=800V;IE=0
2SC2831A VCB=900V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.2A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
2SC2831
2SC2831A
IC=1A ; IB1=-IB2=-0.2A
VCC=200V
2SC2831
2SC2831A
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
100 μA
100 μA
15
8
2.5
MHz
1.0
μs
1.2
3.0
μs
1.0
μs
1.2
2
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