C2898 查看數據表（PDF） - Inchange Semiconductor
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C2898 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=100mH
V(BR) EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.0A; IB=0.8A(pulse test)
VBEsat Base-emitter saturation voltage
IC=4.0A; IB=0.8A(pulse test)
ICBO
Collector cut-off current
ICEO
Collector cut-off current
VCB=400V; IE=0
VCE=350V; RBE=∞
hFE-1
DC current gain
IC=4A ; VCE=5V(pulse test)
hFE-2
DC current gain
IC=8A ; VCE=5V(pulse test)
Switching times
ton
Turn-on time
ts
Storage time
IC=8A, IB1=-IB2=1.6A
VCC≈150V
tf
Fall time
Product Specification
2SC2898
MIN TYP. MAX UNIT
400
V
7
V
1.0
V
1.5
V
50 μA
50 μA
15
7
0.8
μs
2.0 μs
0.8 μs
2
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