C2788 查看數據表（PDF） - Inchange Semiconductor

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C2788

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCE(sat) Collector-emitter saturation voltage IC=4A ;IB=0.8A

VBE(sat) Base-emitter saturation voltage

IC=4A ;IB=0.8A

ICBO

Collector cut-off current

VCB=400V ;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.8A ; VCE=5V

hFE -2

DC current gain

IC=4A ; VCE=5V

fT

Transition frequency

IC=0.8A ; VCE=10V

Product Specification

2SC2788

MIN TYP. MAX UNIT

400

V

500

V

7

V

1.0

V

1.5

V

100 μA

100 μA

15

50

8

20

MHz

2

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