C2815 查看數據表（PDF） - SavantIC Semiconductor

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C2815

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=50mA ; IB=0

V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A

VBEsat

Base-emitter saturation voltage

IC=4A ;IB=0.4A

ICBO

Collector cut-off current

VCB=300V; IE=0

IEBO

Emitter cut-off current

VEB=6.0V; IC=0

hFE

DC current gain

IC=2.5A ; VCE=5V

Product Specification

2SC2815

MIN TYP. MAX UNIT

250

V

300

V

6

V

1.0

V

1.2

V

0.1

mA

0.1

mA

40

2

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