C2816 查看數據表（PDF） - Quanzhou Jinmei Electronic

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生产厂家

C2816

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; RBE=∞;L=100mH

V(BR)EBO Emitter-base breakdown voltage

IE=10mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A

VBEsat Base-emitter saturation voltage

IC=2.5A; IB=0.5A

ICBO

Collector cut-off current

ICEO

Collector cut-off current

VCB=400V ;IE=0

VCE=350V ; RBE=∞

hFE-1

DC current gain

IC=2.5 A ; VCE=5V

hFE-2

DC current gain

IC=5 A ; VCE=5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=5A; IB1=-IB2=1A

VCC=150V

Product Specification

2SC2816

MIN TYP. MAX UNIT

400

V

7

V

1.0

V

1.5

V

50 μA

50 μA

15

7

0.5 μs

1.5 μs

0.5 μs

2

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