2SC2681 查看數據表（PDF） - Inchange Semiconductor
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2SC2681 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.45A
VBE
Base-emitter on voltage
IC=4.5A ; VCE=2V
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
hFE -1
DC current gain
hFE -2
DC current gain
VEB=5V; IC=0
IC=1A ; VCE=2V
IC=4.5A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=2V
hFE-1 classifications
R
Q
60-120
100-200
Product Specification
2SC2681
MIN TYP. MAX UNIT
0.6
1.5
V
1.2
2.0
V
50
μA
50
μA
60
200
40
230
pF
80
MHz
2
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