2SC3075 查看數據表（PDF） - Toshiba
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2SC3075 Datasheet PDF : 5 Pages
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1
Common emitter
VCE = 5 V
IC – VBE
10−1
10−2
Tc = 100°C 25 −40
10−3
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Switching Characteristics
100
50
IC/IB = 10
30
IB1 = −IB2
Pulse width = 20 μs
10
tstg
5
Duty cycle ≤ 1%
Tc = 25°C
3
tf
1
0.5
0.3
tr
0.1
0
0.1
0.2
0.3
0.4
0.5
Collector current IC (A)
2SC3075
1000
800
IC – VBE
Common emitter
VCE = 5 V
600
400
Tc = 100°C 25
−40
200
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
Safe Operating Area
3
IC max (pulsed)*
1 IC max (continuous)
10 μs*
100 μs*
0.5
DC operation
Tc = 25°C
0.3
10 ms*
1 ms*
0.1
0.05
0.03
0.01
1
100 ms*
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
3
10
30
VCEO max
100
300
1000
Collector-emitter voltage VCE (V)
rth – tw
Curves should be applied in thermal limited area.
(Single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
100
(2)
10
(1)
1
0.1
0.001 0.01
0.1
1
10
100 1000
Pulse width tw (s)
4
2006-11-09
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