2SC3040 查看數據表（PDF） - SANYO -> Panasonic

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2SC3040

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

Parameter

Gain-Bandwidth Product

Output Capacitance

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

2SC3040

Symbol

Conditions

fT

Cob

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEO(sus)

VCEX(sus)1

VCEX(sus)2

ton

tstg

tf

VCE=10V, IC=0.8A

VCB=10V, f=1MHz

IC=1mA, IE=0

IC=10mA, RBE=∞

IE=1mA, IC=0

IC=8A, IB=1.6A, L=50µH

IC=8A, IB1=1.6A, L=200µH, IB2=–1.6A, clamped

IC=1.5A, IB1=0.3A, L=200µH, IB2=–0.3A, clamped

IC=5A, IB1=1A, IB2=–1A, RL=40Ω, VCC=200V

IC=5A, IB1=1A, IB2=–1A, RL=40Ω, VCC=200V

IC=5A, IB1=1A, IB2=–1A, RL=40Ω, VCC=200V

Ratings

min typ

20

80

500

400

7

400

400

450

max

1.0

2.5

1.0

Unit

MHz

pF

V

V

V

V

V

V

µs

µs

µs

Switching Time Test Circuit

No.997–2/4

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