2SC3157 查看數據表（PDF） - Inchange Semiconductor
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2SC3157 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3157
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=5A ;IB1=0.5A;L=1mH
100
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
0.6
V
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=100V; IE=0
VCE=100V; VBE=1.5V
Ta=125℃
VEB=5V; IC=0
0.01 mA
0.01
1.0
mA
0.01 mA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
40
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR hFE-3
DC current gain
Switching times
ton
Turn-on time
ts
Storage time
IC=3A ; VCE=5V
IC=5A ; VCE=5V
IC=5A;IB1=-IB2=0.5A ,
RL=10Ω;VCC≈50V
40
200
20
0.5
μs
1.5
μs
tf
Fall time
0.5
μs
hFE-2 classifications
M
L
K
40-80 60-120 100-200
2
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