2SC3168 查看數據表（PDF） - Inchange Semiconductor
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2SC3168 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
VCE(sat) Collector-emitter saturation voltage IC=10A; IB=2A
VBE(sat) Base-emitter saturation voltage
IC=10A; IB=2A
ICBO
Collector cut-off current
At rated voltage
ICEO
Collector cut-off current
At rated voltage
IEBO
Emitter cut-off current
At rated voltage
hFE
DC current gain
IC=10A ; VCE=2V
fT
Transition frequency
IC=2A ; VCE=10V
Product Specification
2SC3168
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1
mA
0.1
mA
0.1
mA
10
40
20
MHz
2
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