C3170 查看數據表（PDF） - Inchange Semiconductor
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C3170 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , L=25mH
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A ;IB=0.6A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=3A ; IB1=-IB2=0.6A
VCC=100V
Product Specification
2SC3170
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
100
μA
100
μA
15
8
8
MHz
1.0
μs
3.0
μs
1.0
μs
2
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