2SC3040 查看數據表（PDF） - Inchange Semiconductor

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2SC3040

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3040

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞

400

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

500

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A

1.0

V

VBEsat Base-emitter saturation voltage

IC=4A ;IB=0.8A

1.5

V

ICBO

Collector cut-off current

VCB=400V ;IE=0

10

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

10

μA

hFE-1

DC current gain

IC=0.8A ; VCE=5V

15

50

hFE -2

DC current gain

IC=4A ; VCE=5V

8

COB

Output capacitance

固IN电C半H导AN体GE SEMICONDUCTOR fT

Transition frequency

Switching times

ton

Turn-on time

ts

Storage time

IE=0 ; VCB=10V;f=1MHz

IC=0.8A ; VCE=10V

IC=5A IB1=-IB2=1A

RL=40Ω,VCC=200V

80

20

1.0

2.5

pF

MHz

μs

μs

tf

Fall time

1.0

μs

‹ hFE-1 classifications

L

M

N

15-30

20-40

30-50

2

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