2SC3055 查看數據表（PDF） - Inchange Semiconductor

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2SC3055

POWER TRANSISTORS(7.0A/400V/50W)

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=0.1A

VBE(sat) Base-emitter saturation voltage

IC=0.5A; IB=0.1A

ICBO

Collector cut-off current

VCB=400V ;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.1A ; VCE=5V

hFE-2

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=0.2A ; VCE=10V

COB

Output capacitance

f=1MHz ; VCB=10V

Product Specification

2SC3055

MIN TYP. MAX UNIT

400

V

450

V

7

V

1.0

V

1.2

V

10 μA

10 μA

20

80

8

28

MHz

25

pF

2

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