SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2970
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.4A
ICBO
Collector cut-off current
VCB=300V ;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
MIN TYP. MAX UNIT
200
V
300
V
7
V
1.0
V
1.5
V
100 µA
100 µA
15
2