2SC3058A 查看數據表（PDF） - SavantIC Semiconductor
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2SC3058A Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3058A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=20A; IB=4A
VBE(sat) Base-emitter saturation voltage
IC=20A; IB=4A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=20A ; VCE=5V
fT
Transition frequency
IC=4A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
450
V
600
V
7
V
1.0
V
1.5
V
100
µA
100
µA
15
50
10
40
30
MHz
420
pF
2
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