2SC3356L-A-AE3-R(2011) 查看數據表（PDF） - Unisonic Technologies

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2SC3356L-A-AE3-R
(Rev.:2011)

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC3356

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

BVCBO

20

V

Collector to Emitter Voltage

BVCEO

12

V

Emitter to Base Voltage

BVEBO

3

V

Collector Current

IC

100

mA

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

°С

Storage Temperature

TSTG

-65~ +150

°С

Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER

Collector-Base Cut-Off Current

Emitter-Base Cut-Off Current

DC Current Gain

Gain Bandwidth Product

Feed-Back Capacitance

Noise Figure

SYMBOL

ICBO

IEBO

hFE

fT

CRE

NF

TEST CONDITIONS

VCB =10V,IE =0

VEB =1 V, IC=0

VCE =10 V, IC =20 mA

VCE =10 V, IC =20 mA

VCB =10 V, IE =0, f =1.0MHz

VCE =10 V, IC =7mA, f =1.0GHz

„ CLASSIFICATION OF hFE

RANK

RANGE

A

50-160

B

160-240

MIN TYP MAX UNIT

1.0 μA

1.0 μA

50

300

7

GHz

1.0 pF

2.0 dB

C

240-300

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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